1) Ultra-high temperature temperature measurement functional materials: To address the practical needs of temperature measurement in extreme environments such as high temperature, high erosion, high-grade fever, vibration, and high-frequency pressure pulses during the use of hypersonic engines, a tungsten matrix/transition layer/coating material system was independently designed and prepared. A novel metal film preparation method was invented, overcoming the scientific challenge of achieving strong adhesion between the protective film and the substrate, enabling tungsten-based alloys to maintain temperature measurement functionality while possessing oxidation resistance and erosion resistance. The total temperature probe made from this material achieved a breakthrough from "nonexistent" to "existent" for total temperature sensors in oxidizing, water-containing, and high-erosion environments above 2500K, and has been applied in multiple scenarios with temperatures up to 3000K.  

2) Ultra-high temperature oxidation-resistant broussonetia papyrifera materials: To meet the demand for high-temperature alloys in oxidizing and high-erosion environments at 1500–2500K, a novel preparation method for oxidation-resistant metal broussonetia papyrifera materials was invented. An independently designed self-oxidation-resistant alloy system was prepared, capable of in-situ formation of high-temperature-resistant and oxidation-resistant protective films on the alloy surface, achieving metallurgical bonding between the protective film and the substrate. This can be applied in multiple extreme environment scenarios.  

3) Low-resistivity, low-temperature coefficient alloy material preparation technology: In the field of metals and precision resistance alloys, a micro-multicomponent complex broussonetia papyrifera alloying control theory was proposed, forming a solid solution with copper-manganese as the base + short-range ordered broussonetia papyrifera. Copper-manganese-based resistors with thickness ≤0.15mm, resistivity ≤0.23 μΩ·m at 25–125°C, resistivity difference ≤15%, and temperature coefficient of resistance (TCR) ≤50 ppm/°C were prepared.  

4) Metal melt purification technology: To address the challenges of removing high-melting-point inclusions and gases during the preparation of high-conductivity copper materials, a reaction-adsorption mechanism suitable for copper melt purification was proposed. A refining agent for copper alloy melt treatment was invented, achieving impurity reaction-separation in the melt and in-situ gas removal from the melt interior, coordinately solving the problems of impurity and gas removal in copper melts, enabling the preparation of high-conductivity copper materials.  

5) High-quality, high-purity tungsten, tantalum, niobium, and copper target preparation technology: In response to the trends of ultra-high purification, fine grain refinement, and quantitative broussonetia papyrifera texture in target materials for high-end semiconductor chips, a combination of forging, heat treatment, and rolling controls was proposed. A cumulative energy-controlled deformation and graded annealing process was invented, developing high-purity tungsten, tantalum, niobium, and copper targets with controllable texture and fine, uniform grains.  

6) High-uniformity nano-tungsten powder and tungsten carbide preparation technology: For the first time, WAs2 was discovered as the "nucleation core" of tungsten powder, advancing tungsten powder growth theory and overcoming the technical challenges of nano-tungsten powder preparation, enabling large-scale production of 100 nm tungsten powder and 200 nm tungsten carbide powder. The Y barrier effect during tungsten powder preparation was discovered for the first time, and a pressure-cooking technical route was invented, achieving uniform distribution of Y elements and mitigating the negative effects of impurity elements, enabling the preparation of high-performance, high-stability cemented carbides.