Jiang Fengyi, Zhang Jianli, Xu Longquan, Ding Jie, Wang Guangxu, Wu Xiaoming, Wang Xiaolan, Mo Chunlan, Quan Zhijue, Guo Xing, Zheng Changda, Pan Shuan, and Liu Junlin

Photonics Research, 2019, 7(2): 144-148. DOI: 10.1364/PRJ.7.000144.

Realization of efficient yellow-light-emitting diodes (LEDs) has always been a challenge in solid-state lighting. Great effort has been made, but only slight advancements have occurred in the past few decades. After comprehensive work on InGaN-based yellow LEDs on Si substrate, we successfully made a breakthrough and pushed the wall-plug efficiency of 565-nm-yellow LEDs to 24.3% at 20 A∕cm² and 33.7% at 3 A∕cm². The success of yellow LEDs can be credited to the improved material quality and reduced compressive strain of InGaN quantum wells by a prestrained layer and substrate, as well as enhanced hole injection by a 3D pn junction with V-pits.