[1] 201309-201412 日本物质材料研究所 联合培养博士

[2] 201009-201603 南京大学 博士研究生

[3] 200609-201006 南京大学 大学本科

[1] 2018-2019 访问学者 耶鲁大学

[2] 2016-2021 教师 南昌大学

一维限制结构增强的单纳米颗粒等离激元探测方法及基因突变检测研究

[1] J. Wang, Z. Wang, Q. Wang, Y. Lu, L. Wang, Passive Electronic Skin with Highly Sensitive Tactile Sensory Capabilities, ACS Applied Electronic Materials, 3 (2021) 4517-4521.

[2] K. Cao, Z. Hu, J. Wang, F. Liu, X. Wu, Z. Wang, L. Wang, CVD growth of rhenium sulfide on carbon nanotubes as an anode for improving the performance of lithium ion batteries, Nanotechnology, 32 (2021) 155703.

[3] W. Hou, J. Wang, Z. Wang, K. Cao, L. Qin, L. Wang, Growth of few-layer graphene on Cu foil by regulating the pressure of reaction gases, CrystEngComm, 22 (2020) 1018-1023.

[4] Z. Wang, H. Yang, S. Zhang, J. Wang, K. Cao, Y. Lu, W. Hou, S. Guo, X.-A. Zhang, L. Wang, An approach to high-throughput growth of submillimeter transition metal dichalcogenide single crystals, Nanoscale, 11 (2019) 22440-22445.

[5] J. Wang, Y. Sheng, H. Sun, F. Gao, D. Zhang, Y. Zheng, Y. Shi, Enhanced polarization photodetection of metallic cavity ensemble through spontaneously configured lateral electrodes, Nanotechnology, 30 (2019) 495204.

[6] M. Sumiya, N. Toyomitsu, Y. Nakano, J. Wang, Y. Harada, L. Sang, T. Sekiguchi, T. Yamaguchi, T. Honda, Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates, APL Materials, 5 (2017) 016105.

[7] J. Wang, H. Sun, Y. Sheng, L. Yang, F. Gao, Y. Yin, Z. Hu, Q. Wan, R. Zhang, Y. Zheng, Surface-diffusion enhanced Ga incorporation in ZnO nanowires by oxygen vacancies, Appl. Surf. Sci., 361 (2016) 221-225.

[8] J. Wang, Y. Oshima, Y. Cho, Y. Shi, T. Sekiguchi, Cathodoluminescence study on the impurity behaviors at threading dislocations in GaN, Superlattices Microstruct., 99 (2016) 77-82.

[9] F. Gao, D. Zhang, J. Wang, H. Sun, Y. Yin, Y. Sheng, S. Yan, B. Yan, C. Sui, Y. Zheng, Ultraviolet electroluminescence from Au-ZnO nanowire Schottky type light-emitting diodes, Appl. Phys. Lett., 108 (2016) 261103.

[10] W. Yang, B. Liu, B. Yang, J. Wang, T. Sekiguchi, S. Thorsten, X. Jiang, Pseudobinary Solid‐Solution: An Alternative Way for the Bandgap Engineering of Semiconductor Nanowires in the Case of GaP–ZnSe, Adv. Funct. Mater., 25 (2015) 2543-2551.

[11] J. Wang, H. Sun, Y. Sheng, F. Gao, Y. Yin, Y. Li, L. Pan, Y. Zheng, Y. Shi, T. Sekiguchi, Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate, physica status solidi (RRL)–Rapid Research Letters, 9 (2015) 466-469.

[12] J. Wang, Y. Harada, M. Sumiya, Y. Shi, T. Sekiguchi, Cathodoluminescence study of optical properties along the growth direction of ZnO films on GaN substrate, physica status solidi (c), 12 (2015) 1129-1131.