论文题目：Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by tem

论文概要：Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by tem

论文类型：*

第一作者：程抱昌

通讯作者：程抱昌

参与作者：程抱昌

发表期刊名称：JOURNAL OF MATERIALS CHEMISTRY C

收录情况：*

期刊分区（SCI为中科院分区）：*

影响因子：*

发表日期：2015

卷、期、页：*

ISSN号：*

关键字：Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by tem

摘要：Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by tem