论文题目：Gate-Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back-to-Back Diodes

论文概要：Gate-Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back-to-Back Diodes

论文类型：*

第一作者：程抱昌

通讯作者：程抱昌

参与作者：程抱昌

发表期刊名称：ADVANCED ELECTRONIC MATERIALS

收录情况：*

期刊分区（SCI为中科院分区）：*

影响因子：*

发表日期：2016

卷、期、页：4

ISSN号：*

关键字：Gate-Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back-to-Back Diodes

摘要：Gate-Free Controlled Multibit Memories Based on Individual ZnO:In Micro/Nanowire Back-to-Back Diodes