论文题目：Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

论文概要：Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

论文类型：*

第一作者：程抱昌

通讯作者：程抱昌

参与作者：程抱昌

发表期刊名称：JOURNAL OF MATERIALS CHEMISTRY C

收录情况：*

期刊分区（SCI为中科院分区）：*

影响因子：*

发表日期：2015

卷、期、页：*

ISSN号：*

关键字：Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory

摘要：Space charge polarization-induced symmetrical negative resistive switching in individual p-type GeSe2:Bi superstructure nanobelts for non-volatile memory